1 c2m0080120d silicon carbide power mosfet c2 m tm mosfet technology n-channel enhancement mode features ? high blocking voltage with low on-resistance ? high speed switching with low capacitances ? easy to parallel and simple to drive ? avalanche ruggedness ? halogen free, rohs compliant benefts ? higher system effciency ? reduced cooling requirements ? increased power density ? increased system switching frequency applications ? solar inverters ? switch mode power supplies ? high voltage dc/dc converters ? battery chargers ? motor drives ? pulsed power applications package to-247-3 part number package c2m0080120d to-247-3 v ds 1200 v i d @ 25?c 36 a r ds(on) 80 m ? maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note v dsmax drain - source voltage 1200 v v gs = 0 v, i d = 100 a v gsmax gate - source voltage -10/+25 v absolute maximum values v gsop gate - source voltage -5/+20 v recommended operational values i d continuous drain current 36 a v gs = 20 v, t c = 25?c fig. 19 24 v gs = 20 v, t c = 100?c i d(pulse) pulsed drain current 80 a pulse width t p limited by t jmax fig. 22 p d power dissipation 192 w t c =25?c, t j = 150 ?c fig. 20 t j , t stg operating junction and storage temperature -55 to +150 ?c t l solder temperature 260 ?c 1.6mm (0.063) from case for 10s m d mounting torque 1 8.8 nm lbf-in m3 or 6-32 screw c2m0080120d rev. c, 10-2015
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1200 v v gs = 0 v, i d = 100 a v gs(th) gate threshold voltage 2.0 2.6 4 v v ds = v gs , i d = 5 ma fig. 11 2.1 v v ds = v gs , i d = 5 ma, t j = 150oc i dss zero gate voltage drain current 1 100 a v ds = 1200 v, v gs = 0 v i gss gate-source leakage current 250 na v gs = 20 v, v ds = 0 v r ds(on) drain-source on-state resistance 80 98 m ? v gs = 20 v, i d = 20 a fig. 4, 5, 6 128 v gs = 20 v, i d = 20a, t j = 150oc g fs transconductance 8.1 s v ds = 20 v, i ds = 20 a fig. 7 7.8 v ds = 20 v, i ds = 20 a, t j = 150oc c iss input capacitance 950 pf v gs = 0 v v ds = 1000 v f = 1 mhz v ac = 25 mv fig. 17, 18 c oss output capacitance 80 c rss reverse transfer capacitance 7.6 e oss c oss stored energy 45 j fig. 16 e as avalanche energy, single pluse 1 j i d = 20a, v dd = 50v fig. 29 e on turn-on switching energy 265 j v ds = 800 v, v gs = -5/20 v, i d = 20a, r g(ext) = 2.5?, l= 142 h fig. 25 e off turn off switching energy 135 t d(on) turn-on delay time 11 ns v dd = 800 v, v gs = -5/20 v i d = 20 a, r g(ext) = 2.5 ?, r l = 40 ?, timing relative to v ds per iec60747-8-4 pg 83 fig. 27 t r rise time 20 t d(off) turn-off delay time 23 t f fall time 19 r g(int) internal gate resistance 4.6 ? f = 1 mhz , v ac = 25 mv q gs gate to source charge 15 nc v ds = 800 v, v gs = -5/20 v i d = 20 a per iec60747-8-4 pg 21 fig. 12 q gd gate to drain charge 23 q g total gate charge 62 reverse diode characteristics symbol parameter typ. max. unit test conditions note v sd diode forward voltage 3.3 v v gs = - 5 v, i sd = 10 a fig. 8, 9, 10 3.1 v v gs = - 5 v, i sd = 10 a, t j = 150 c i s continuous diode forward current 36 a t c = 25?c note 1 t rr reverse recover time 32 ns v gs = - 5 v, i sd = 20 a, v r = 800 v dif/dt = 2400 a/s note 1 q rr reverse recovery charge 192 nc i rrm peak reverse recovery current 10 a note (1): when using sic body diode the maximum recommended v gs = -5v thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.60 0.65 c/w fig. 21 r ja thermal resistance from junction to ambient 40 c2m0080120d rev. c, 10-2015
3 0 10 20 30 40 50 60 70 0.0 2.5 5.0 7.5 10.0 12.5 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 10 20 30 40 50 60 70 0.0 2.5 5.0 7.5 10.0 12.5 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 10 20 30 40 50 60 70 0.0 2.5 5.0 7.5 10.0 12.5 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 2. output characteristics t j = 25 oc typical performance figure 5. on-resistance vs. drain current for various temperatures figure 1. output characteristics t j = -55 oc figure 3. output characteristics t j = 150 oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 20 a v gs = 20 v t p < 200 s 0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 60 70 on resistance, r ds on (mohms) drain - source current, i ds (a) conditions: v gs = 20 v t p < 200 s t j = 150 c t j = - 55 c t j = 25 c figure 4. normalized on-resistance vs. temperature 0 40 80 120 160 200 240 280 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (mohms) junction temperature, t j ( c) conditions: i ds = 20 a t p < 200 s v gs = 20 v v gs = 18 v v gs = 16 v v gs = 14 v figure 6. on-resistance vs. temperature for various gate voltage c2m0080120d rev. c, 10-2015
4 typical performance figure 8. body diode characteristic at -55 oc figure 9. body diode characteristic at 25 oc 0 10 20 30 40 0 2 4 6 8 10 12 14 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: v ds = 20 v tp < 200 s t j = 150 c t j = - 55 c t j = 25 c - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = - 55 c t p < 200 s - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 25 c t p < 200 s - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (a) v gs = 0 v v gs = - 2 v v gs = - 5 v condition: t j = 150 c t p < 200 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature t j ( c) conditions v ds = 10 v i ds = 0.5 ma conditions v ds = v gs i ds = 5 ma figure 10. body diode characteristic at 150 oc - 5 0 5 10 15 20 25 0 10 20 30 40 50 60 70 gate - source voltage, v gs (v) gate charge, q g (nc) conditions: i ds = 20 a i gs = 100 ma v ds = 800 v t j = 25 c figure 7. transfer characteristic for various junction temperatures figure 11. threshold voltage vs. temperature figure 12. gate charge characteristics c2m0080120d rev. c, 10-2015
5 typical performance figure 15. 3rd quadrant characteristic at 150 oc figure 13. 3rd quadrant characteristic at -55 oc - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v figure 14. 3rd quadrant characteristic at 25 oc 0 5 10 15 20 25 30 35 40 45 50 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain to source voltage, v ds (v) figure 16. output capacitor stored energy figure 17. capacitances vs. drain-source voltage (0 - 200v) 1 10 100 1000 10000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss 1 10 100 1000 10000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss figure 18. capacitances vs. drain-source voltage (0 - 1000v) c2m0080120d rev. c, 10-2015
6 1e - 3 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse typical performance 0 5 10 15 20 25 30 35 40 - 55 - 30 - 5 20 45 70 95 120 145 drain - source continous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c 0 50 100 150 200 250 - 55 - 30 - 5 20 45 70 95 120 145 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) 100 s 1 ms 10 s conditions: t c = 25 c d = 0, parameter: t p 100 ms limited by r ds on figure 22. safe operating area figure 21. transient thermal impedance (junction - case) 0 200 400 600 800 1000 1200 1400 1600 0 10 20 30 40 50 switching energy (uj) drain to source current, i ds (a) conditions: t j = 25 c v dd = 800 v r g(ext) = 2.5 ? v gs = - 5/+20 v fwd = c4d10120a l = 142 h e off e on e total figure 23. clamped inductive switching energy vs. drain current (v dd = 800v) = 600v) 0 200 400 600 800 1000 1200 0 10 20 30 40 50 switching energy (uj) drain to source current, i ds (a) conditions: t j = 25 c v dd = 600 v r g(ext) = 2.5 ? v gs = - 5/+20 v fwd = c4d10120a l = 142 h e off e on e total figure 19. continuous drain current derating vs. case temperature figure 20. maximum power dissipation derating vs. case temperature c2m0080120d rev. c, 10-2015
7 typical performance 0 100 200 300 400 500 600 700 800 900 1000 0 5 10 15 20 25 30 switching loss (uj) external gate resistor rg(ext) (ohms) e off e on e total conditions: t j = 25 c v dd = 800 v i ds = 20 a v gs = - 5/+20 v fwd = c4d10120a l = 142 h 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 time (ns) external gate resistor, r g(ext) (ohms) conditions: t j = 25 c v dd = 800 v r l = 40 ? v gs = - 5/+20 v t d (off) t d (on) t f t r 0 100 200 300 400 500 600 - 50 - 25 0 25 50 75 100 125 150 swithcing loss (uj) junction temperature, t j ( c) conditions: i ds = 20 a v dd = 800 v r g(ext) = 2.5 ? v gs = - 5/+20 v fwd = c4d10120a l = 142 h e off e on e total figure 26. clamped inductive switching energy vs. temperature figure 27. switching times vs. r g(ext) figure 25. clamped inductive switching energy vs. r g(ext) figure 28. switching times defnition 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 200 avalanche current (a) time in avalanche t av (us) conditons: v dd = 50 v figure 29. single avalanche soa curve c2m0080120d rev. c, 10-2015
8 test circuit schematic esd test total devices sampled resulting classifcation esd-hbm all devices passed 1000v 2 (>2000v) esd-mm all devices passed 400v c (>400v) esd-cdm all devices passed 1000v iv (>1000v) esd ratings d 1 c4d10120a 10a, 1200v sic schottky d.u.t c2m0080120d l=142 uh q 2 v dc d.u.t c2 m0080120d q 1 v gs = - 5v c2m0080120d r g r g c dc = 42.3 uf l=142 uh q 2 v dc r g c dc = 42.3 uf figure 30. clamped inductive switching waveform test circuit figure 31. body diode recovery test circuit c2m0080120d rev. c, 10-2015
9 package dimensions package to-247-3 recommended solder pad layout to-247-3 pos inches millimeters min max min max a .190 .205 4.83 5.21 a1 .090 .100 2.29 2.54 a2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 d .819 .831 20.80 21.10 d1 .640 .695 16.25 17.65 d2 .037 .049 0.95 1.25 e .620 .635 15.75 16.13 e1 .516 .557 13.10 14.15 e2 .145 .201 3.68 5.10 e3 .039 .075 1.00 1.90 e4 .487 .529 12.38 13.43 e .214 bsc 5.44 bsc n 3 3 l .780 .800 19.81 20.32 l1 .161 .173 4.10 4.40 ?p .138 .144 3.51 3.65 q .216 .236 5.49 6.00 s .238 .248 6.04 6.30 t 9? 11? 9? 11? u 9? 11? 9? 11? v 2? 8? 2? 8? w 2? 8? 2? 8? pinout information: ? pin 1 = gate ? pin 2, 4 = drain ? pin 3 = source t u w v part number package marking c2m0080120d to-247-3 c2m0080120 c2m0080120d rev. c, 10-2015
10 10 related links ? c2m pspice models: http://wolfspeed.com/power/tools-and-support ? sic mosfet isolated gate driver reference design: http://wolfspeed.com/power/tools-and-support ? sic mosfet evaluation board: http://wolfspeed.com/power/tools-and-support c2m0080120d rev. c, 10-2015 copyright ? 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree repre - sentative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems. notes
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